Some web links are included in this book for the readers to explore the details of some content. The features and applications of the semiconductor devices are descripted accurately by the text, the equations, and the graphics in this book. These are the basic devices that are used in industry and they should be covered in an introductory semiconductor or electronic course. This book discusses the features and applications of the fundamental semiconductor devices such as diodes, bipolar junction transistors, junction field effect transistors, metal oxide semiconductor field effect transistors, and insulated gate bipolar transistors. Reviewed by Yang Zhao, Assistant Professor, Taylor University on 12/16/21, updated 12/23/21 Journalism, Media Studies & Communications +.
This study provides a promising approach for developing next-generation energy-efficient electronic devices and ultralow-power applications. Furthermore, compared to previously reported threshold-switching devices, our device demonstrated hysteresis-free switching characteristics.
We obtained repetitive operation with low SS (32.8 mV dec −1) at room temperature, along with low dielectric injection efficiency (10 −6), through a structural design with separation of the conducting region, which determines on-state carrier transport, and the steep-switching region where the transition from off- to on-state occurs via impact ionization. In this study, we presented an impact-ionization-based threshold switching field-effect transistor (I 2S-FET) fabricated with a serial connection of a MoS 2 FET and WSe 2 impact ionization-based threshold switch (I 2S). However, most of them cannot retain steep switching at room temperature, and device performance degradation issues caused by impact ionization-induced hot carriers have not been structurally addressed. Recently, two-dimensional material-based impact ionization transistors with various structures have been reported with the advantages of a low critical electric field and a unique quantum confinement effect. A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit ( kT/ q) is required to efficiently process a continuously increasing amount of data.
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